Catálogo de publicaciones - revistas

<jats:p>A 4×4 beta-phase gallium oxide (<jats:italic>β</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6×10<jats:sup>7</jats:sup>, photo responsivity of 634.15 A⋅W<jats:sup>−1</jats:sup>, specific detectivity of 5.93×10<jats:sup>11</jats:sup> cm⋅Hz<jats:sup>1/2</jats:sup>⋅W<jats:sup>−1</jats:sup> (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>Hybrid nanofluids are remarkable functioning liquids that are intended to reduce the energy loss while maximizing heat transmission. In the involvement of suction and nonlinear thermal radiation effects, this study attempted to explore the energy transmission features of the inclined magnetohydrodynamic (MHD) stagnation flow of CNTs-hybrid nanofluid across the nonlinear permeable stretching or shrinking sheet. This work also includes some noteworthy features like chemical reactions, variable molecular diffusivity, quadratic convection, viscous dissipation, velocity slip and heat omission assessment. Employing appropriate similarity components, the model equations were modified to ODEs and computed using the HAM technique. The impact of various relevant flow characteristics on movement, heat and concentration profiles was investigated and plotted on a graph. Considering various model factors, the significance of drag friction, heat and mass transfer rate were also computed in tabular and graphical form. This leads to the conclusion that such factors have a considerable impact on the dynamics of fluid as well as the other engineering measurements of interest. Furthermore, viscous forces are dominated by increasing the values of <jats:italic>λ</jats:italic> <jats:sub> <jats:italic>p</jats:italic> </jats:sub>,<jats:italic>δ</jats:italic> <jats:sub> <jats:italic>m</jats:italic> </jats:sub> and <jats:italic>δ</jats:italic> <jats:sub> <jats:italic>q</jats:italic> </jats:sub> as a result the <jats:italic>F</jats:italic>'(<jats:italic>ζ</jats:italic>) accelerates while opposite trend is observed for <jats:italic>M</jats:italic> and <jats:italic>φ</jats:italic>. The drag friction is boosted by the augmentation <jats:italic>M</jats:italic>, <jats:italic>λ</jats:italic> <jats:sub> <jats:italic>p</jats:italic> </jats:sub> and <jats:italic>φ</jats:italic>, but rate of heat transfer declined. According to our findings, hybrid nanoliquid effects dominate that of ordinary nanofluid in terms of <jats:italic>F</jats:italic>'(<jats:italic>ζ</jats:italic>),Θ(<jats:italic>ζ</jats:italic>) and <jats:italic>φ</jats:italic>(<jats:italic>ζ</jats:italic>) profiles. The HAM and the numerical technique (shooting method) were found to be in good agreement.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>The P<jats:sub>S</jats:sub> defect is obtained by replacing one S atom with one P atom in the wide-bandgap semiconductor MgS. Based on first-principles calculations, the formation energy, defect levels, and electronic structure of the P<jats:sub>S</jats:sub> defect in different charge states are evaluated. We predict that the neutral P<jats:sub>S</jats:sub> <jats:sup>0</jats:sup> and positively charged P<jats:sub>S</jats:sub> <jats:sup>+1</jats:sup> are the plausible qubit candidates for the construction of quantum systems, since they maintain the spin conservation during optical excited transition. The zero-phonon line at the P<jats:sub>S</jats:sub> <jats:sup>0</jats:sup> and P<jats:sub>S</jats:sub> <jats:sup>+1</jats:sup> defects are 0.44 eV and 0.21 eV, respectively, which fall in the infrared band. In addition, the zero-field splitting parameter <jats:italic>D</jats:italic> of the P<jats:sub>S</jats:sub> <jats:sup>+1</jats:sup> with spin-triplet is 2920 MHz, which is in the range of microwave, showing that the P<jats:sub>S</jats:sub> <jats:sup>+1</jats:sup> defect can be manipulated by microwave. Finally, the principal values of the hyperfine tensor are examined, it is found that they decay exponentially with the distance from the defect site.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>Anomalous transports of dipole in alternating electric fields are investigated by means of numerical calculation of its average angular velocity (or current). Our results show that the alternating electric fields can make the dipole exhibit many interesting transport behaviors. There exist current bifurcation and multiple current reversals phenomena about frequency of the alternating electric fields in the system in the absence of constant bias force, while many platforms appear in the curve of its average angular velocity vs. the force, i.e., multiple mobility transitions phenomenon in the presence of the constant force, dependent on frequencies of the alternating electric fields. Further investigation indicates that the multiple mobility transitions are attributed to the traveling forces on the dipole. Intrinsic physical mechanism and conditions for the characteristic dynamical behaviors to occur are also discussed in detail. These findings will possess crucial significance for optimizing heating control in the alternating electric fields.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>Based on some analyses of existing chaotic image encryption frameworks and a new designed 3D-ILM chaotic map, an asymmetric image encryption algorithm using public-key RSA is presented in this paper. In the first stage, a new 3D-ILM chaotic map is proposed to enhance the chaotic behavior considering analysis of time sequence, Lyapunov exponent and Shannon entropy. In the second stage, combined with the public key RSA algorithm, a new key acquisition mathematical model (MKA) is constructed to obtain the initial keys for the 3D-ILM. Consequently, the keystream can be produced depending on the plain image for a higher security. Moreover, a novel process model (NPM) for the input of the 3D-ILM is built, which is built to improve the distribution uniformity of the chaotic sequence. In the third stage, to encrypt the plain image, a pre-process by XOR operation with a random matrix is applied. Then, the pre-processed image is performed by a permutation for rows, a downward modulo function for adjacent pixels, a permutation for columns, a forward direction XOR addition-modulo diffusion, and a backward direction XOR addition-modulo diffusion to achieve the final cipher image. Moreover, experiments show that the the proposed algorithm has a better performance. Especially, the number of pixels change rate (NPCR) is near to ideal case 99.6094%, with the unified average changing intensity (UACI) near to 33.4634% and the information entropy (IE) near to 8.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>The velocity of a particle detector in granular flow can be identified as the composition of rolling and sliding velocities. The study of the contribution of rolling and sliding velocities provide a new explanation to the relative motion between the Detector and the local granular flow. In this study, a spherical detector using embedded inertial navigation technology is placed in the chute granular flow to study the movement of the Detector relative to the granular flow. It is shown by PIV that the velocity of chute granular flow conforms to Silbert’s formula. And the velocity of the Detector is greater than the granular flow around it. By decomposing the velocity into sliding and rolling velocity, it is indicated that the movement of the detector relative to the granular flow is mainly caused by rolling. The rolling detail shown by DEM simulation leads to two potential mechanisms based on the position and driven of the Detector.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>We consider matrix integrable fifth-order mKdV equations via a kind of group reductions of the Ablowitz-Kaup-Newell-Segur matrix spectral problems. Based on properties of eigenvalue and adjoint eigenvalue problems, we solve the corresponding Riemann-Hilbert problems, where eigenvalues could equal adjoint eigenvalues, and construct their soliton solutions, when there are zero reflection coefficients. Illustrative examples of scalar and two-component integrable fifth-order mKdV equations are given.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>Irradiation-induced defects often hinder the slip of dislocations, which will make the performance of structural materials of nuclear reactor drop sharply, especially for core structural materials. In present work, molecular dynamics method is used to investigate the interactions between edge dislocations and three typical irradiation-induced defects (Void, Frank loop and Stacking fault tetrahedron) with the sizes of 3, 5, and 7 nm at different temperatures in Fe-10Ni-20Cr alloy. The critical resolved shear stress (CRSS) was compared among different defect types after interacting with edge dislocations. The results show that the CRSS decreases with increasing temperature and decreasing defect size for all defect types during the interaction with edge dislocations, except for the case of Frank loops with 3nm at 900 K. By comparison, the CRSS in Frank loops is significantly higher than that of others for the same size, which is due to the occurrence of unfaulting and formation of superjog or stacking-fault complex during the interaction. The atomic evolution of irradiation-induced defects after interacting with dislocations could provide novel insights for the design of new structural materials.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>The formulas for parameters of negative electron affinity semiconductor NEAS with large λ NEASLD are deduced, respectively, λ is the mean escape depth of secondary electrons; And the methods of obtaining parameters such as λ, <jats:italic>B</jats:italic>, <jats:italic>E</jats:italic> <jats:sub>pom</jats:sub>, maximum <jats:italic>δ</jats:italic> and <jats:italic>δ</jats:italic> at 100.0 keV≥<jats:italic>E</jats:italic> <jats:sub>po</jats:sub>≥1.0 keV of NEASLD with the deduced formulas are presented, respectively, where <jats:italic>B</jats:italic> is the probability that an internal secondary electron escapes into vacuum upon reaching the emission surface of emitter, <jats:italic>δ</jats:italic> is secondary electron yield, <jats:italic>E</jats:italic> <jats:sub>po</jats:sub> is incident energy of primary electron, <jats:italic>E</jats:italic> <jats:sub>pom</jats:sub> is the <jats:italic>E</jats:italic> <jats:sub>po</jats:sub> corresponding to maximum <jats:italic>δ</jats:italic>. The parameters obtained here were analyzed, it can be concluded that several parameters of NEASLD obtained by the methods presented here agree with those obtained by other authors. The relation between secondary electron emission and photo-emission from NEAS with large mean escape depth of excited electrons is investigated, it concludes that the presented method of obtaining λ is a more accurate method of obtaining corresponding parameter of NEAS with large λ<jats:sub>ph</jats:sub>, and that the presented method of calculating B at <jats:italic>E</jats:italic> <jats:sub>po</jats:sub> &amp;#62; 10.0 keV is a more widely applicable method of obtaining corresponding parameter of NEAS with large λ<jats:sub>ph</jats:sub>, λ<jats:sub>ph</jats:sub> is the mean escape depth of photo-electrons.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>The development of quantum optics theory based on the method of integration within the ordered product of operator (IWOP) has greatly stimulated the study of quantum states in the light field, especially non-Gaussian states with various non-classical properties. In this paper, the two-mode squeezing operator is derived by using a combinatorial field in which one mode is a chaotic field and another mode is a vacuum field by using the integral theory within the Weyl ordering product of operators. The density operator of the new light field, its entanglement property and photon number distribution are analyzed. We also mentioned that tracing a three-mode pure state can yield this new light field. These demonstrated a theoretical approach to investigating new density operators of light fields.</jats:p>