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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/27/9/097305

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

Sheng-Xu Dong; Yun Bai; Yi-Dan Tang; Hong Chen; Xiao-Li Tian; Cheng-Yue Yang; Xin-Yu Liu

Palabras clave: General Physics and Astronomy.

Pp. 097305

doi: 10.1088/1674-1056/27/9/097306

Key technologies for dual high- k and dual metal gate integration

Yong-Liang Li; Qiu-Xia Xu; Wen-Wu Wang

Palabras clave: General Physics and Astronomy.

Pp. 097306

doi: 10.1088/1674-1056/27/9/097307

Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures

Minhao Zhang; Xuefeng Wang; Fengqi Song; Rong Zhang

Palabras clave: General Physics and Astronomy.

Pp. 097307

doi: 10.1088/1674-1056/27/9/097308

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

Chong Wang; Xin Wang; Xue-Feng Zheng; Yun Wang; Yun-Long He; Ye Tian; Qing He; Ji Wu; Wei Mao; Xiao-Hua Ma; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 097308

doi: 10.1088/1674-1056/27/9/097309

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

Sheng Zhang; Ke Wei; Yang Xiao; Xiao-Hua Ma; Yi-Chuan Zhang; Guo-Guo Liu; Tian-Min Lei; Ying-Kui Zheng; Sen Huang; Ning Wang; Muhammad Asif; Xin-Yu Liu

Palabras clave: General Physics and Astronomy.

Pp. 097309

doi: 10.1088/1674-1056/27/9/097310

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Xiao-Song Zhao; Wei-Hua Han; Yang-Yan Guo; Ya-Mei Dou; Fu-Hua Yang

Palabras clave: General Physics and Astronomy.

Pp. 097310

doi: 10.1088/1674-1056/27/9/097311

Adsorptions of metal adatoms on graphene-like BC 3 and their rich electronic properties: A first-principles study

Pengfei Sui; Jiaqi Dai; Yinchang Zhao; Zhenhong Dai

Palabras clave: General Physics and Astronomy.

Pp. 097311

doi: 10.1088/1674-1056/27/9/097401

0– π transition induced by the barrier strength in spin superconductor Josephson junctions

Wen Zeng; Rui Shen

Palabras clave: General Physics and Astronomy.

Pp. 097401

doi: 10.1088/1674-1056/27/9/097501

Modulational instability, quantum breathers and two-breathers in a frustrated ferromagnetic spin lattice under an external magnetic field

Wanhan Su; Jiayu Xie; Tianle Wu; Bing Tang

Palabras clave: General Physics and Astronomy.

Pp. 097501

doi: 10.1088/1674-1056/27/9/097502

Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Shengli Guo; Fanlong Ning

Palabras clave: General Physics and Astronomy.

Pp. 097502