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Título de Acceso Abierto

Science and Technology of Advanced Materials

Resumen/Descripción – provisto por la editorial en inglés
Science and Technology of Advanced Materials is the leading open access, international journal covering a broad spectrum of materials science research including functional materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications.
Palabras clave – provistas por la editorial

materials science; biomedical and bio-inspired materials; energy; environment; nanoscale materials

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No requiere desde mar. 2000 / hasta nov. 2007 Directory of Open Access Journals acceso abierto
No requiere desde mar. 2000 / hasta nov. 2007 IOPScience acceso abierto
No requiere desde mar. 2000 / hasta nov. 2007 ScienceDirect acceso abierto
No requiere desde ene. 2000 / hasta nov. 2007 Taylor and Francis Online acceso abierto

Información

Tipo de recurso:

revistas

ISSN impreso

1468-6996

ISSN electrónico

1878-5514

Idiomas de la publicación

  • inglés

País de edición

Reino Unido

Fecha de publicación

Información sobre licencias CC

https://creativecommons.org/licenses/by/4.0/

https://creativecommons.org/licenses/by-nc/4.0/

Cobertura temática

materiales

Ingeniería de los materiales

Tabla de contenidos

doi: 10.1016/j.stam.2006.11.018

Advanced CMOS device technologies for 45 nm node and below

A. Veloso; T. Hoffmann; A. Lauwers; H. Yu; E. Augendre; S. Kubicek; P. Verheyen; N. Collaert; P. Absil; M. Jurczak; S. Biesemans

Palabras clave: General Materials Science.

Pp. 214-218

doi: 10.1016/j.stam.2006.12.007

Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

Shiniti Yoshida; Yasumasa Watanabe; Yuuki Kita; Takayoshi Shimura; Heiji Watanabe; Kiyoshi Yasutake; Yasushi Akasaka; Yasuo Nara; Keisaku Yamada

Palabras clave: General Materials Science.

Pp. 219-224

doi: 10.1016/j.stam.2007.02.005

Degradation of magnetic tunnel junctions with thin AlOxbarrier

Tadashi Mihara; Yoshinari Kamakura; Masato Morifuji; Kenji Taniguchi

Palabras clave: General Materials Science.

Pp. 225-229

doi: 10.1016/j.stam.2007.02.002

Porous silicon and aluminum co-gettering experiment in p-type multicrystalline silicon substrate

P.N. Vinod

Palabras clave: General Materials Science.

Pp. 231-236

doi: 10.1016/j.stam.2007.01.003

Microstructural characterization of Mg–Al–Sr alloys

M. Aljarrah; M.A. Parvez; Jian Li; E. Essadiqi; M. Medraj

Palabras clave: General Materials Science.

Pp. 237-248

doi: 10.1016/j.stam.2007.01.010

Elucidation of interactive effects of synthesis conditions on the characteristics of mesoporous silicas templated using polyoxide surfactant

A.Z. Abdullah; A.H. Kamaruddin; N. Razali; H. Abdullah; S. Bhatia

Palabras clave: General Materials Science.

Pp. 249-256

doi: 10.1016/j.stam.2007.02.006

The effect of manganese oxide on the sinterability of hydroxyapatite

S. Ramesh; C.Y. Tan; C.L. Peralta; W.D. Teng

Palabras clave: General Materials Science.

Pp. 257-263

doi: 10.1016/j.stam.2007.03.001

Prediction of powder particle size during centrifugal atomisation using a rotating disk

Huiping Li; Xucheng Deng

Palabras clave: General Materials Science.

Pp. 264-270

doi: 10.1016/j.stam.2007.05.001

JAIST International Symposium on Nanotechnology 2006 (NT2006)

Hideki Matsumura

Palabras clave: General Materials Science.

Pp. 271-272

doi: 10.1016/j.stam.2007.02.010

Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

Kazuo Takimiya; Tatsuya Yamamoto; Hideaki Ebata; Takafumi Izawa

Palabras clave: General Materials Science.

Pp. 273-276