Catálogo de publicaciones - revistas
Título de Acceso Abierto
Science and Technology of Advanced Materials
Resumen/Descripción – provisto por la editorial en inglés
Science and Technology of Advanced Materials is the leading open access, international journal covering a broad spectrum of materials science research including functional materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications.Palabras clave – provistas por la editorial
materials science; biomedical and bio-inspired materials; energy; environment; nanoscale materials
Disponibilidad
Institución detectada | Período | Navegá | Descargá | Solicitá |
---|---|---|---|---|
No requiere | desde mar. 2000 / hasta nov. 2007 | Directory of Open Access Journals | ||
No requiere | desde mar. 2000 / hasta nov. 2007 | IOPScience | ||
No requiere | desde mar. 2000 / hasta nov. 2007 | ScienceDirect | ||
No requiere | desde ene. 2000 / hasta nov. 2007 | Taylor and Francis Online |
Información
Tipo de recurso:
revistas
ISSN impreso
1468-6996
ISSN electrónico
1878-5514
Idiomas de la publicación
- inglés
País de edición
Reino Unido
Fecha de publicación
2000-
Información sobre licencias CC
https://creativecommons.org/licenses/by/4.0/
Cobertura temática
Tabla de contenidos
Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam
N. Fukata; T. Oshima; T. Tsurui; S. Ito; K. Murakami
Palabras clave: General Materials Science.
Pp. 628-632
Photochemical and complexation studies for new fluorescent and colored chelator
Asuka Ohshima; Atsuya Momotake; Tatsuo Arai
Palabras clave: General Materials Science.
Pp. 633-643
Optical processes of red emission from Eu doped GaN
Junji Sawahata; Hyungjin Bang; Jongwon Seo; Katsuhiro Akimoto
Palabras clave: General Materials Science.
Pp. 644-648
Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses
Toshiaki Hattori; Satoshi Arai; Keisuke Ohta; Aya Mochiduki; Shin-ichi Ookuma; Keiji Tukamoto; Rakchanok Rungsawang
Palabras clave: General Materials Science.
Pp. 649-655
Normal-incommensurate phase transition in (Sr1−xBax)2Nb2O7 ferroelectric single crystals
G. Shabbir; Y. Akishige; S. Kojima
Palabras clave: General Materials Science.
Pp. 656-659
Syntheses, structures, and properties of oxorhenium(V) complexes with 2-, 5-, and/or 7-substituted 8-quinolinolato ligands
Yoshitaro Miyashita; Tetuya Ohashi; Akiomi Imai; Nagina Amir; Kiyoshi Fujisawa; Ken-ichi Okamoto
Palabras clave: General Materials Science.
Pp. 660-666
Utilization of Si atomic steps for Cu nanowire fabrication
Ryu Hasunuma; Takanobu Yada; Junichi Okamoto; Daisuke Hojo; Norio Tokuda; Kikuo Yamabe
Palabras clave: General Materials Science.
Pp. 667-670
Enhancement of the sensitivity of electrochemical stripping analysis by evaporative concentration using a super-hydrophobic surface
Isao Yanagimachi; Norihiro Nashida; Koichiro Iwasa; Hiroaki Suzuki
Palabras clave: General Materials Science.
Pp. 671-677
Fabrication and characterization of Ti–Ni shape memory thin film using Ti/Ni multilayer technique
H. Cho; H.Y. Kim; S. Miyazaki
Palabras clave: General Materials Science.
Pp. 678-683
X-ray structural study of the layered compounds CoxNbS2
Takashi Ueno; Kazuki Yamamoto; Hideki Matsukura; Tomoko Kusawake; Ken-ichi Ohshima
Palabras clave: General Materials Science.
Pp. 684-688