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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

No disponibles.

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

A New High Power Microwave Source Operated at Low Magnetic Field

Yang Jian-Hua; Zhang Ya-Zhou; Zhang Jian-De; SHU-Ting; Li Chuan-Lu

Palabras clave: General Physics and Astronomy.

Pp. 96-98

Structural Evolution of Nanostructured  -Ni-28Fe Alloy Investigated by Using the Internal Friction Technique

Liu Yin; Qin Xiao-Ying; Wang Li; Zhang Ming-Xu

Palabras clave: General Physics and Astronomy.

Pp. 99-101

P-Type Doping of GaN by Mg + Implantation

Yao Shu-De; Zhou Sheng-Qiang; Yang Zi-Jian; Lu Yi-Hong; Sun Chang-Chun; Sun Chang; Zhang Guo-Yi; Vantomme Andre; Pipeleers Bert; Zhao Qiang

Palabras clave: General Physics and Astronomy.

Pp. 102-104

Moving Compacton-like Kink in a Purely Anharmonic Lattice with Symmetric On-Site Potential

Xia Qing-Lin; Jiang Dong-Chu

Palabras clave: General Physics and Astronomy.

Pp. 105-107

Fabrication of Single Crystalline silicon on Glass by Smart-Cut Technique

Song Hua-Qing; Shi Jing; Zhang Miao; Lin Qing; Lin Cheng-Lu

Palabras clave: General Physics and Astronomy.

Pp. 108-110

Influence of Mass Transport on Formation of Si-Nanostructures

Zhang Xiao-Na; Li Chao-Rong; Zhang Ze

Palabras clave: General Physics and Astronomy.

Pp. 111-113

Electronic Structures of the Filled Tetrahedral Semiconductor LiMgN with a Zincblende-Type Structure

Li Hui-Ping; Hou Zhu-Feng; Huang Mei-Chun; Zhu Zi-Zhong

<jats:p> An ab initio method with mixed-basis norm-conserving non-local pseudo-potentials has been employed to investigate the electronic structures of LiMgN. The band structure, electronic density of states and charge density contour plot of LiMgN are also presented. By the calculation, we have found that LiMgN with a zincblende-type structure was an indirect gap semiconductor, and the value of indirect (Γ-<jats:italic>X</jats:italic>) energy band gap under the local density approximation was 2.97 eV. In addition, the strong covalent character for Li-N and Mg-N has also been found in LiMgN.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. 114-116

Behaviour of Polariton in a Simple Model

Wan Shao-Long; Ma Shuang-Ge; Wang Ke-Lin

Palabras clave: General Physics and Astronomy.

Pp. 117-120

Second Bound State of Biexcitons in Quantum Dots

Xie Wen-Fang

Palabras clave: General Physics and Astronomy.

Pp. 121-123

Electronic Transport in Nanostructures Consisting of Magnetic-Electric Barriers

Lu Mao-Wang; Zhang Li-De; Yan Xiao-Hong

Palabras clave: General Physics and Astronomy.

Pp. 124-126