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Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .

Chapters 6 and 7 are devoted to the study of the optical properties of semiconductors. In this chapter we have discussed those phenomena involving only one photon frequency. In processes like and an incident electromagnetic wave illuminates the sample and the frequency of the wave is unchanged by its interaction with the sample. In the following chapter we shall discuss phenomena in which the frequency of the incident wave is altered by the sample. The optical properties of the sample studied in this chapter can be completely described by its complex . A microscopic theory of this function shows that photons interact mainly with the electrons in semiconductors by exciting interband and intraband transitions. from the valence bands to the conduction bands produce peaks and shoulders in the optical spectra which can be attributed to in the valence-conduction band . These structures can be greatly enhanced by using the technique of , in which the derivatives of some optical response function with respect to either frequency or an external modulation (such as electric and stress fields) are measured. These optical measurements have provided an extremely sensitive test of existing electronic band structure calculations. Occasionally, disagreements between experimental and theoretical spectral peak positions and lineshapes have been found. These can be explained by the as a result of the Coulomb interaction between excited electrons and holes in the semiconductor. occur in doped semiconductors and their contribution to the optical properties can be obtained by using the proposed for free electrons in simple metals.

Transitions between the discrete levels of impurities in semiconductors can also contribute to absorption of photons in the infrared. Although these processes are much waker than those involving intrinsic electronic transitions, they can give rise to extremely sharp peaks and have been a very useful and highly sensitive probe of the electronic energy levels of impurities. Finally, in polar semiconductors, such as those with the zincblende crystal structure, photons can be absorbed and reflected as a result of interaction with optical phonons. The reflectivity becomes particularly high for photons with frequency between the TO and LO phonon frequencies, giving rise to a phenomenon known for a long time as . The coupling between infrared-active optic phonons and electromagnetic waves can be so strong that they cannot be separated inside the medium. Instead, they should be regarded as coupled waves or quasiparticles known as .