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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Theoretical investigation of frequency characteristics of free oscillation and injection-locked magnetrons

Song Yue; Dong-ping Gao; Zhao-chuan Zhang; Wei-long Wang

Palabras clave: General Physics and Astronomy.

Pp. 118403

Analytical threshold voltage model for strained silicon GAA-TFET

Hai-Yan Kang; Hui-Yong Hu; Bin Wang

Palabras clave: General Physics and Astronomy.

Pp. 118501

Equivalent distributed capacitance model of oxide traps on frequency dispersion ofCVcurve for MOS capacitors

Han-Han Lu; Jing-Ping Xu; Lu Liu; Pui-To Lai; Wing-Man Tang

Palabras clave: General Physics and Astronomy.

Pp. 118502

Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal–oxide–semiconductor field-effect transistors with tunnel diode body contact structures

Kai Lu; Jing Chen; Yuping Huang; Jun Liu; Jiexin Luo; Xi Wang

Palabras clave: General Physics and Astronomy.

Pp. 118503

Technology demonstration of a novel poly-Si nanowire thin film transistor

Libin Liu; Renrong Liang; Bolin Shan; Jun Xu; Jing Wang

Palabras clave: General Physics and Astronomy.

Pp. 118504

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

Ge Zhu; Fu Zheng; Chao Wang; Zhibin Sun; Guangjie Zhai; Qing Zhao

Palabras clave: General Physics and Astronomy.

Pp. 118505

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H 2 O as an oxidizer

Jia-Yong Lin; Yan-Li Pei; Yi Zhuo; Zi-Min Chen; Rui-Qin Hu; Guang-Shuo Cai; Gang Wang

Palabras clave: General Physics and Astronomy.

Pp. 118506

Dynamic instability of collective myosin II motors

Jin-Fang Li; Zi-Qing Wang; Qi-Kun Li; Jian-Jun Xing; Guo-Dong Wang

Palabras clave: General Physics and Astronomy.

Pp. 118701

Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

Yanjiao Shen; Jianhui Chen; Jing Yang; Bingbing Chen; Jingwei Chen; Feng Li; Xiuhong Dai; Haixu Liu; Ying Xu; Yaohua Mai

Palabras clave: General Physics and Astronomy.

Pp. 118801

Pedestrians’ behavior in emergency evacuation: Modeling and simulation

Lei Wang; Jie-Hui Zheng; Xiao-Shuang Zhang; Jian-Lin Zhang; Qiu-Zhen Wang; Qian Zhang

Palabras clave: General Physics and Astronomy.

Pp. 118901