Catálogo de publicaciones - revistas

Compartir en
redes sociales

Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/25/8/088401

Metallic spherical anechoic chamber for antenna pattern measurement

Ali Farahbakhsh; Mohammad Khalaj-Amirhosseini

Palabras clave: General Physics and Astronomy.

Pp. 088401

doi: 10.1088/1674-1056/25/8/088402

Compensation of body shake errors in terahertz beam scanning single frequency holography for standoff personnel screening

Wei Liu; Chao Li; Zhao-Yang Sun; Yu Zhao; Shi-You Wu; Guang-You Fang

Palabras clave: General Physics and Astronomy.

Pp. 088402

doi: 10.1088/1674-1056/25/8/088501

Fabrication of Al/AlO x /Al junctions using pre-exposure technique at 30-keV e-beam voltage

Dong Lan; Guangming Xue; Qiang Liu; Xinsheng Tan; Haifeng Yu; Yang Yu

Palabras clave: General Physics and Astronomy.

Pp. 088501

doi: 10.1088/1674-1056/25/8/088502

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level

Zhi-Yuan Lun; Yun Li; Kai Zhao; Gang Du; Xiao-Yan Liu; Yi Wang

Palabras clave: General Physics and Astronomy.

Pp. 088502

doi: 10.1088/1674-1056/25/8/088503

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Yu-Rong Liu; Gao-Wei Zhao; Pai-To Lai; Ruo-He Yao

Palabras clave: General Physics and Astronomy.

Pp. 088503

doi: 10.1088/1674-1056/25/8/088504

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xiao-Wen Xi; Chang-Chun Chai; Yang Liu; Yin-Tang Yang; Qing-Yang Fan; Chun-Lei Shi

Palabras clave: General Physics and Astronomy.

Pp. 088504

doi: 10.1088/1674-1056/25/8/088505

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

Ping Qin; Wei-Dong Song; Wen-Xiao Hu; Yuan-Wen Zhang; Chong-Zhen Zhang; Ru-Peng Wang; Liang-Liang Zhao; Chao Xia; Song-Yang Yuan; Yi-an Yin; Shu-Ti Li; Shi-Chen Su

Palabras clave: General Physics and Astronomy.

Pp. 088505

doi: 10.1088/1674-1056/25/8/088701

Effect of a force-free end on the mechanical property of a biopolymer — A path integral approach

Zicong Zhou; Béla Joós

Palabras clave: General Physics and Astronomy.

Pp. 088701

doi: 10.1088/1674-1056/25/8/088801

Sodium chloride methanol solution spin-coating process for bulk-heterojunction polymer solar cells

Tong-Fang Liu; Yu-Feng Hu; Zhen-Bo Deng; Xiong Li; Li-Jie Zhu; Yue Wang; Long-Feng Lv; Tie-Ning Wang; Zhi-Dong Lou; Yan-Bing Hou; Feng Teng

Palabras clave: General Physics and Astronomy.

Pp. 088801

doi: 10.1088/1674-1056/25/8/088901

Influence of bus stop with left-turn lines between two adjacent signalized intersections

Ming-Bao Pang; Lan-Hang Ye; Ya-Nan Pei

Palabras clave: General Physics and Astronomy.

Pp. 088901