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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/25/5/057306

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

Chen-Fei Wu; Yun-Feng Chen; Hai Lu; Xiao-Ming Huang; Fang-Fang Ren; Dun-Jun Chen; Rong Zhang; You-Dou Zheng

Palabras clave: General Physics and Astronomy.

Pp. 057306

doi: 10.1088/1674-1056/25/5/057307

Electron transport in electrically biased inverse parabolic double-barrier structure

M Bati; S Sakiroglu; I Sokmen

Palabras clave: General Physics and Astronomy.

Pp. 057307

doi: 10.1088/1674-1056/25/5/057308

Length dependence of rectification in organic co-oligomer spin rectifiers

Gui-Chao Hu; Zhao Zhang; Ying Li; Jun-Feng Ren; Chuan-Kui Wang

Palabras clave: General Physics and Astronomy.

Pp. 057308

doi: 10.1088/1674-1056/25/5/057401

Developing Josephson junction array chips for microvolt applications

Wenhui Cao; Jinjin Li; Yuan Zhong; Yuan Gao; Honghui Li; Zengmin Wang; Qing He

Palabras clave: General Physics and Astronomy.

Pp. 057401

doi: 10.1088/1674-1056/25/5/057402

Effect of residual stress on nematic domains in BaFe 2− x Ni x

Ding Hu; Wenliang Zhang; Yuan Wei; Xiaotian Zhang; Cong Ren; Lei Shan; Yi-feng Ya; Huiqian Luo; Shiliang Li

Palabras clave: General Physics and Astronomy.

Pp. 057402

doi: 10.1088/1674-1056/25/5/057501

First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr 2 S 4

Xu-Hui Zhu; Xiang-Rong Chen; Bang-Gui Liu

Palabras clave: General Physics and Astronomy.

Pp. 057501

doi: 10.1088/1674-1056/25/5/057502

Abnormal variation of magnetic properties with Ce content in (PrNdCe) 2 Fe 14 B sintered magnets prepared by dual alloy method

Xue-Feng Zhang; Jian-Ting Lan; Zhu-Bai Li; Yan-Li Liu; Le-Le Zhang; Yong-Feng Li; Qian Zhao

Palabras clave: General Physics and Astronomy.

Pp. 057502

doi: 10.1088/1674-1056/25/5/057701

Dielectric and piezoelectric properties of (110) oriented Pb(Zr 1− x Ti x

Jian-Hua Qiu; Zhi-Hui Chen; Xiu-Qin Wang; Ning-Yi Yuan; Jian-Ning Ding

Palabras clave: General Physics and Astronomy.

Pp. 057701

doi: 10.1088/1674-1056/25/5/057702

Distribution of electron traps in SiO 2 /HfO 2 nMOSFET

Xiao-Hui Hou; Xue-Feng Zheng; Ao-Chen Wang; Ying-Zhe Wang; Hao-Yu Wen; Zhi-Jing Liu; Xiao-Wei Li; Yin-He Wu

Palabras clave: General Physics and Astronomy.

Pp. 057702

doi: 10.1088/1674-1056/25/5/057703

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du

Palabras clave: General Physics and Astronomy.

Pp. 057703