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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/18/1/046

Quick preparation and thermal transport properties of nanostructured β-FeSi 2 bulk material

Li Han; Tang Xin-Feng; Cao Wei-Qiang; Zhang Qing-Jie

Palabras clave: General Physics and Astronomy.

Pp. 287-292

doi: 10.1088/1674-1056/18/1/047

The effects of fast neutron irradiation on oxygen in Czochralski silicon

Chen Gui-Feng; Yan Wen-Bo; Chen Hong-Jian; Li Xing-Hua; Li Yang-Xian

Palabras clave: General Physics and Astronomy.

Pp. 293-297

doi: 10.1088/1674-1056/18/1/048

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

Yin Zhi-Hua; Long Yun-Ze; Huang Kun; Wan Mei-Xiang; Chen Zhao-Jia

Palabras clave: General Physics and Astronomy.

Pp. 298-302

doi: 10.1088/1674-1056/18/1/049

A super junction SiGe low-loss fast switching power diode

Ma Li; Gao Yong

Palabras clave: General Physics and Astronomy.

Pp. 303-308

doi: 10.1088/1674-1056/18/1/050

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal–oxide–semiconductor field-effect transistors

Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Hu Shi-Gang

Palabras clave: General Physics and Astronomy.

Pp. 309-314

doi: 10.1088/1674-1056/18/1/051

A new analytical model of high voltage silicon on insulator (SOI) thin film devices

Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

Palabras clave: General Physics and Astronomy.

Pp. 315-319

doi: 10.1088/1674-1056/18/1/052

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Yan Jun-Feng; Wang Tao; Wang Jing-Wei; Zhang Zhi-Yong; Zhao Wu

Palabras clave: General Physics and Astronomy.

Pp. 320-323

doi: 10.1088/1674-1056/18/1/053

Growth mechanism and photoluminescence of the SnO 2 nanotwists on thin film and the SnO 2 short nanowires on nanorods

Wang Bing; Xu Ping

Palabras clave: General Physics and Astronomy.

Pp. 324-332

doi: 10.1088/1674-1056/18/1/054

Industrial diamonds grown in Ni 7 0Mn 25 Co 5 –graphite–sulfur system under HPHT

Zhou Lin; Jia Xiao-Peng; Ma Hong-An; Zheng You-Jin; Li Yan-Tao

Palabras clave: General Physics and Astronomy.

Pp. 333-338

doi: 10.1088/1674-1056/18/1/055

Theoretical study of the stereodynamics of the He+HD + reaction

Xu Wen-Wu; Liu Xin-Guo; Luan Shi-Xia; Sun Shan-Shu; Zhang Qing-Gang

Palabras clave: General Physics and Astronomy.

Pp. 339-343