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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
Si-Zhe Chen; Kuang Sheng
Palabras clave: General Physics and Astronomy.
Pp. 077201
A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires
Zong-Peng Zhu; Bin Wei; Jian-Hua Zhang; Jun Wang
Palabras clave: General Physics and Astronomy.
Pp. 077202
Lattice structures and electronic properties of CIGS/CdS interface: First-principles calculations
Fu-Ling Tang; Ran Liu; Hong-Tao Xue; Wen-Jiang Lu; Yu-Dong Feng; Zhi-Yuan Rui; Min Huang
Palabras clave: General Physics and Astronomy.
Pp. 077301
Efficiency of electrical manipulation in two-dimensional topological insulators
Mi Pang; Xiao-Guang Wu
Palabras clave: General Physics and Astronomy.
Pp. 077302
Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells
Qian Feng; Kai Du; Yu-Kun Li; Peng Shi; Qing Feng
Palabras clave: General Physics and Astronomy.
Pp. 077303
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Min-Han Mi; Kai Zhang; Xing Chen; Sheng-Lei Zhao; Chong Wang; Jin-Cheng Zhang; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 077304
Effect of alumina thickness on Al 2 O 3 /InP interface with post deposition annealing in oxygen ambient
Zhuo Yang; Jing-Zhi Yang; Yong Huang; Kai Zhang; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 077305
A low specific on-resistance SOI LDMOS with a novel junction field plate
Yin-Chun Luo; Xiao-Rong Luo; Gang-Yi Hu; Yuan-Hang Fan; Peng-Cheng Li; Jie Wei; Qiao Tan; Bo Zhang
Palabras clave: General Physics and Astronomy.
Pp. 077306
High dV/dtimmunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications
Wan-Jun Chen; Rui-Ze Sun; Chao-Fei Peng; Bo Zhang
Palabras clave: General Physics and Astronomy.
Pp. 077307
Exotic electronic states in the world of flat bands: From theory to material
Zheng Liu; Feng Liu; Yong-Shi Wu
Palabras clave: General Physics and Astronomy.
Pp. 077308