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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/23/6/066301

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

Shu-Wen Zheng; Guang-Han Fan; Miao He; Tao Zhang

Palabras clave: General Physics and Astronomy.

Pp. 066301

doi: 10.1088/1674-1056/23/6/066501

Phase transition and thermal expansion property of Cr2−xZr0.5xMg0.5xMo3O12solid solution

Wen-Bo Song; Jun-Qiao Wang; Zhi-Yuan Li; Xian-Sheng Liu; Bao-He Yuan; Er-Jun Liang

Palabras clave: General Physics and Astronomy.

Pp. 066501

doi: 10.1088/1674-1056/23/6/066801

Binding energies of impurity states in strained wurtzite GaN/AlxGa1−xN heterojunctions with finitely thick potential barriers

Zhen-Yu Feng; Shi-Liang Ban; Jun Zhu

Palabras clave: General Physics and Astronomy.

Pp. 066801

doi: 10.1088/1674-1056/23/6/066802

Atomic diffusion across Ni 50 Ti 50 —Cu explosive welding interface: Diffusion layer thickness and atomic concentration distribution

Shi-Yang Chen; Zhen-Wei Wu; Kai-Xin Liu

Palabras clave: General Physics and Astronomy.

Pp. 066802

doi: 10.1088/1674-1056/23/6/066803

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C—SiC

Chong-Chong Dai; Xue-Chao Liu; Tian-Yu Zhou; Shi-Yi Zhuo; Biao Shi; Er-Wei Shi

Palabras clave: General Physics and Astronomy.

Pp. 066803

doi: 10.1088/1674-1056/23/6/066804

Sputtering pressure influence on growth morphology, surface roughness, and electrical resistivity for strong anisotropy beryllium film

Bing-Chi Luo; Kai Li; Xiao-Li Kang; Ji-Qiang Zhang; Yu-Dan He; Jiang-Shan Luo; Wei-Dong Wu; Yong-Jian Tang

Palabras clave: General Physics and Astronomy.

Pp. 066804

doi: 10.1088/1674-1056/23/6/066805

Preparation and characterization of thick cubic boron nitride films

Ming-E Wang; Guo-Jia Ma; Chuang Dong; Shui-Li Gong

Palabras clave: General Physics and Astronomy.

Pp. 066805

doi: 10.1088/1674-1056/23/6/067101

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n + -layer

Sheng-Dong Hu; Xing-He Wu; Zhi Zhu; Jing-Jing Jin; Yin-Hui Chen

Palabras clave: General Physics and Astronomy.

Pp. 067101

doi: 10.1088/1674-1056/23/6/067102

Electronic and magnetic properties of BiFeO 3 with intrinsic defects: First-principles prediction

Rui-Peng Yang; Si-Xian Lin; Xiao-Gong Fang; Ming-Hui Qin; Xing-Sen Gao; Min Zeng; Jun-Ming Liu

Palabras clave: General Physics and Astronomy.

Pp. 067102

doi: 10.1088/1674-1056/23/6/067103

Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

Liang Li; Lin-An Yang; Jun-Shuai Xue; Rong-Tao Cao; Sheng-Rui Xu; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 067103