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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
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Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Dendrite to symmetry-broken dendrite transition in directional solidification of non-axially oriented crystals
Hui Xing; Jian-Yuan Wang; Chang-Le Chen; Ke-Xin Jin; Li-Fei Du
Palabras clave: General Physics and Astronomy.
Pp. 038104
Residual stress induced wetting variation on electric brush-plated Cu film
Ke-Ke Meng; Yue Jiang; Zhong-Hao Jiang; Jian-She Lian; Qing Jiang
Palabras clave: General Physics and Astronomy.
Pp. 038201
Self-consistent field theory of adsorption of flexible polyelectrolytes onto an oppositely charged sphere
Zhao-Yang Tong; Yue-Jin Zhu; Chao-Hui Tong
Palabras clave: General Physics and Astronomy.
Pp. 038202
Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit
Xiao-Xian Liu; Zhang-Ming Zhu; Yin-Tang Yang; Feng-Juan Wang; Rui-Xue Ding
Palabras clave: General Physics and Astronomy.
Pp. 038401
Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits
Li-Bo Qian; Zhang-Ming Zhu; Yin-Shui Xia; Rui-Xue Ding; Yin-Tang Yang
Palabras clave: General Physics and Astronomy.
Pp. 038402
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
Ming Li; Yong Wang; Kai-Ming Wong; Kei-May Lau
Palabras clave: General Physics and Astronomy.
Pp. 038403
Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor
Da Huang; Jun-Jie Wu; Yu-Hua Tang
Palabras clave: General Physics and Astronomy.
Pp. 038404
UV-ozone-treated MoO 3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC 71 BM photovoltaic devices
Qian-Qian Yang; Dao-Bin Yang; Su-Ling Zhao; Yan Huang; Zheng Xu; Wei Gong; Xing Fan; Zhi-Fang Liu; Qing-Yu Huang; Xu-Rong Xu
Palabras clave: General Physics and Astronomy.
Pp. 038405
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz
Li-Dan Wang; Peng Ding; Yong-Bo Su; Jiao Chen; Bi-Chan Zhang; Zhi Jin
Palabras clave: General Physics and Astronomy.
Pp. 038501
A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs
Cong Li; Yi-Qi Zhuang; Li Zhang; Gang Jin
Palabras clave: General Physics and Astronomy.
Pp. 038502