Catálogo de publicaciones - revistas
Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Interfacial electronic structure at a metal—phthalocyanine/graphene interface: Copper—phthalocyanine versus iron—phthalocyanine
Wei-Guo Ye; Dan Liu; Xiao-Feng Peng; Wei-Dong Dou
Palabras clave: General Physics and Astronomy.
Pp. 117301
Near-field optical observations of surface plasmon wave interference at subwavelength hole arrays perforated in Au film
Jiang-Yan Li; Lin Gan; Zhi-Yuan Li
Palabras clave: General Physics and Astronomy.
Pp. 117302
Thermoelectric transport through a quantum dot with a magnetic impurity
Zhen Yu; Yu Guo; Jun Zheng; Feng Chi
Palabras clave: General Physics and Astronomy.
Pp. 117303
Coupling strength effect on shot noise in boron devices
Gui-Qin Li; Yong Guo
Palabras clave: General Physics and Astronomy.
Pp. 117304
Transition from the Kondo effect to a Coulomb blockade in an electron shuttle
Rong Zhang; Wei-Dong Chu; Su-Qing Duan; Ning Yang
Palabras clave: General Physics and Astronomy.
Pp. 117305
Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
Ren-Bing Tan; Hua Qin; Xiao-Yu Zhang; Wen Xu
Palabras clave: General Physics and Astronomy.
Pp. 117306
Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
Sheng-Lei Zhao; Wei-Wei Chen; Tong Yue; Yi Wang; Jun Luo; Wei Mao; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 117307
Low voltage program-erasable Pd-Al 2 O 3 -Si capacitors with Ru nanocrystals for nonvolatile memory application
Lan Lan; Hong-Yan Gou; Shi-Jin Ding; Wei Zhang
Palabras clave: General Physics and Astronomy.
Pp. 117308
A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process
Gao-Bo Xu; Qiu-Xia Xu; Hua-Xiang Yin; Hua-Jie Zhou; Tao Yang; Jie-Bin Niu; Jia-Han Yu; Jun-Feng Li; Chao Zhao
Palabras clave: General Physics and Astronomy.
Pp. 117309
Temperature-dependent dielectric properties of Au/Si 3 N 4 /n-Si (metal—insulator—semiconductor) structures
T. Ataseven; A. Tataroğlu
Palabras clave: General Physics and Astronomy.
Pp. 117310