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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/22/10/107102

First-principles calculations of electronic and magnetic properties of CeN: The LDA + U method

Ai-Min Hao; Jing Bai

Palabras clave: General Physics and Astronomy.

Pp. 107102

doi: 10.1088/1674-1056/22/10/107103

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on Zn Y 1− x O

Kong-Ping Wu; Shu-Lin Gu; Jian-Dong Ye; Kun Tang; Shun-Ming Zhu; Meng-Ran Zhou; You-Rui Huang; Rong Zhang; You-Dou Zheng

Palabras clave: General Physics and Astronomy.

Pp. 107103

doi: 10.1088/1674-1056/22/10/107104

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

Jie-Yu Qin; Gang Du; Xiao-Yan Liu

Palabras clave: General Physics and Astronomy.

Pp. 107104

doi: 10.1088/1674-1056/22/10/107105

The structural, elastic, and electronic properties of Zr x Nb 1− x

Xiao-Wei Sun; Xin-Yu Zhang; Su-Hong Zhang; Yan Zhu; Li-Min Wang; Shi-Liang Zhang; Ming-Zhen Ma; Ri-Ping Liu

Palabras clave: General Physics and Astronomy.

Pp. 107105

doi: 10.1088/1674-1056/22/10/107106

The nonlinear optical properties of a magneto-exciton in a strained Ga 0.2 In 0.8 As/GaAs quantum dot

N. R. Senthil Kumar; A. John Peter; Chang Kyoo Yoo

Palabras clave: General Physics and Astronomy.

Pp. 107106

doi: 10.1088/1674-1056/22/10/107201

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNxmultilayers

Cong Li; Jun Xu; Wei Li; Xiao-Fan Jiang; Sheng-Hua Sun; Ling Xu; Kun-Ji Chen

Palabras clave: General Physics and Astronomy.

Pp. 107201

doi: 10.1088/1674-1056/22/10/107202

A shortcut for determining growth mode

R. A. Rehman; Yi-Liang Cai; Han-Jie Zhang; Ke Wu; Wei-Dong Dou; Hai-Yang Li; Pi-Mo He; Shi-Ning Bao

Palabras clave: General Physics and Astronomy.

Pp. 107202

doi: 10.1088/1674-1056/22/10/107301

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi 2 Sr 2 Co 2

Guo-Ying Yan; Zi-Long Bai; Hui-Ling Li; Guang-Sheng Fu; Fu-Qiang Liu; Wei Yu; Jiang-Long Wang; Shu-Fang Wang

Palabras clave: General Physics and Astronomy.

Pp. 107301

doi: 10.1088/1674-1056/22/10/107302

High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

Bai-Qing Xue; Sheng-Kai Wang; Le Han; Hu-Dong Chang; Bing Sun; Wei Zhao; Hong-Gang Liu

Palabras clave: General Physics and Astronomy.

Pp. 107302

doi: 10.1088/1674-1056/22/10/107303

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Wei-Wei Chen; Xiao-Hua Ma; Bin Hou; Jie-Jie Zhu; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 107303