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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

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Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/20/3/036105

Molecular dynamics study of helium bubble pressure in titanium

Bao-Ling Zhang; Jun Wang; Qing Hou

Palabras clave: General Physics and Astronomy.

Pp. 036105

doi: 10.1088/1674-1056/20/3/036106

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Zhi-Qun Cheng; Sha Hu; Jun Liu; Qi-Jun Zhang

<jats:p>In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. 036106

doi: 10.1088/1674-1056/20/3/036401

Control of random Boolean networks via average sensitivity of Boolean functions

Shi-Jian Chen; Yi-Guang Hong

Palabras clave: General Physics and Astronomy.

Pp. 036401

doi: 10.1088/1674-1056/20/3/036402

Evidence for the anomalous scaling behaviour of the molecular-beam epitaxy growth equation

Gang Tang; Hui Xia; Da-Peng Hao; Zhi-Peng Xun; Rong-Ji Wen; Yu-Ling Chen

Palabras clave: General Physics and Astronomy.

Pp. 036402

doi: 10.1088/1674-1056/20/3/036801

CO adsorption on small Au n ( n = 1 — 7) clusters supported on a reduced rutile TiO
Yun-Jiang Wang; Chong-Yu Wang; Shan-Ying Wang

Palabras clave: General Physics and Astronomy.

Pp. 036801

doi: 10.1088/1674-1056/20/3/037101

First-principles study of electronic properties and stability of Nb 5 SiB 2 (001) surface

Yu-Jiang-Zi Xu; Jia-Xiang Shang; Fu-He Wang

Palabras clave: General Physics and Astronomy.

Pp. 037101

doi: 10.1088/1674-1056/20/3/037102

A new perspective on optoelectric conversion in conjugated polymers

Wen Liu; Ming-Hua Zhang; Hai-Hong Li; Yong-Juan Wang; De-Sheng Liu

Palabras clave: General Physics and Astronomy.

Pp. 037102

doi: 10.1088/1674-1056/20/3/037103

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

Bing Li; Liang-Huan Feng; Zhao Wang; Xu Zheng; Jia-Gui Zheng; Ya-Ping Cai; Jing-Quan Zhang; Wei Li; Li-Li Wu; Zhi Lei; Guang-Gen Zeng

Palabras clave: General Physics and Astronomy.

Pp. 037103

doi: 10.1088/1674-1056/20/3/037104

Renormalization of spin polarised itinerant electron bands in the normal state of a model ferromagnetic superconductor

Lei Ma; Ai-Qun Huang; Jun Li

Palabras clave: General Physics and Astronomy.

Pp. 037104

doi: 10.1088/1674-1056/20/3/037301

Impurity-related electronic properties in quantum dots under electric and magnetic fields

Hong Zhang; Li-Xue Zhai; Xue Wang; Chun-Yuan Zhang; Jian-Jun Liu

Palabras clave: General Physics and Astronomy.

Pp. 037301