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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/19/10/107204

The etching of a -plane GaN epilayers grown by metal-organic chemical vapour deposition

Xu Sheng-Rui; Hao Yue; Zhang Jin-Cheng; Zhou Xiao-Wei; Cao Yan-Rong; Ou Xin-Xiu; Mao Wei; Du Da-Chao; Wang Hao

Palabras clave: General Physics and Astronomy.

Pp. 107204

doi: 10.1088/1674-1056/19/10/107205

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

Liu Fei; Mo Fu-Yao; Li Li; Su Zan-Jia; Huang Ze-Qiang; Deng Shao-Zhi; Chen Jun; Xu Ning-Sheng

Palabras clave: General Physics and Astronomy.

Pp. 107205

doi: 10.1088/1674-1056/19/10/107206

GaP layers grown on GaN with and without buffer layers

Li Shu-Ti; Cao Jian-Xing; Fan Guang-Han; Zhang Yong; Zheng Shu-Wen; Su Jun

Palabras clave: General Physics and Astronomy.

Pp. 107206

doi: 10.1088/1674-1056/19/10/107207

Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes

M. A Yeganeh; Sh Rahmatallahpur; A Nozad; R. K Mamedov

Palabras clave: General Physics and Astronomy.

Pp. 107207

doi: 10.1088/1674-1056/19/10/107301

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Li Jin; Liu Hong-Xia; Li Bin; Cao Lei; Yuan Bo

Palabras clave: General Physics and Astronomy.

Pp. 107301

doi: 10.1088/1674-1056/19/10/107302

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Li Jin; Liu Hong-Xia; Li Bin; Cao Lei; Yuan Bo

Palabras clave: General Physics and Astronomy.

Pp. 107302

doi: 10.1088/1674-1056/19/10/107303

Effect of transparency on Josephson junction between s+g-wave superconductors

Gholamreza Rashedi

Palabras clave: General Physics and Astronomy.

Pp. 107303

doi: 10.1088/1674-1056/19/10/107304

Study and optimal simulation of 4H—SiC floating junction Schottky barrier diodes' structures and electric properties

Nan Ya-Gong; Pu Hong-Bin; Cao Lin; Ren Jie

Palabras clave: General Physics and Astronomy.

Pp. 107304

doi: 10.1088/1674-1056/19/10/107305

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

Wang Ze-Gao; Chen Yuan-Fu; Chen Cao; Tian Ben-Lang; Chu Fu-Tong; Liu Xing-Zhao; Li Yan-Rong

Palabras clave: General Physics and Astronomy.

Pp. 107305

doi: 10.1088/1674-1056/19/10/107306

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

Zhong Wen-Wu; Liu Fa-Min; Cai Lu-Gang; Zhou Chuan-Cang; Ding Peng; Zhang Huan

Palabras clave: General Physics and Astronomy.

Pp. 107306