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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/19/4/047103

A dark hollow beam from a selectively liquid-filled photonic crystal fibre

Zhang Mei-Yan; Li Shu-Guang; Yao Yan-Yan; Fu Bo; Zhang Lei

Palabras clave: General Physics and Astronomy.

Pp. 047103

doi: 10.1088/1674-1056/19/4/047201

Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

Song Qing-Wen; Zhang Yu-Ming; Zhang Yi-Men; Zhang Qian; Guo Hui; Li Zhi-Yun; Wang Zhong-Xu

Palabras clave: General Physics and Astronomy.

Pp. 047201

doi: 10.1088/1674-1056/19/4/047202

Magnetotransport through an Aharonov–Bohm ring with parallel double quantum dots coupled to ferromagnetic leads

Wu Shao-Quan; Hou Tao; Zhao Guo-Ping; Yu Wan-Lun

Palabras clave: General Physics and Astronomy.

Pp. 047202

doi: 10.1088/1674-1056/19/4/047203

Influence of spin–orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a Rashba two-dimensional electron gas

Yan Yu-Zhen; Hu Liang-Bin()

Palabras clave: General Physics and Astronomy.

Pp. 047203

doi: 10.1088/1674-1056/19/4/047204

Study of a 4H–SiC epitaxial n-channel MOSFET

Tang Xiao-Yan; Zhang Yu-Ming; Zhang Yi-Men

Palabras clave: General Physics and Astronomy.

Pp. 047204

doi: 10.1088/1674-1056/19/4/047205

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Huang Jun-Yi; Fan Guang-Han; Zheng Shu-Wen; Niu Qiao-Li; Li Shu-Ti; Cao Jian-Xing; Su Jun; Zhang Yong

Palabras clave: General Physics and Astronomy.

Pp. 047205

doi: 10.1088/1674-1056/19/4/047301

Electric-stress reliability and current collapse of different thickness SiN x passivated AlGaN/GaN high electron mobility transistors

Yang Ling; Hu Gui-Zhou; Hao Yue; Ma Xiao-Hua; Quan Si; Yang Li-Yuan; Jiang Shou-Gao

Palabras clave: General Physics and Astronomy.

Pp. 047301

doi: 10.1088/1674-1056/19/4/047302

Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations

Ye Han; Lu Peng-Fei; Yu Zhong-Yuan; Yao Wen-Jie; Chen Zhi-Hui; Jia Bo-Yong; Liu Yu-Min

Palabras clave: General Physics and Astronomy.

Pp. 047302

doi: 10.1088/1674-1056/19/4/047303

Electronic transport through a periodic array of quantum-dot rings

Xue Hai-Bin; Zhang Han-Yin; Nie Yi-Hang; Li Zhi-Jian; Liang Jiu-Qing

Palabras clave: General Physics and Astronomy.

Pp. 047303

doi: 10.1088/1674-1056/19/4/047304

Influence of local environment on the intensity of the localized surface plasmon polariton of Ag nanoparticles

Huang Qian; Zhang Xiao-Dan; Zhang He; Xiong Shao-Zhen; Geng Wei-Dong; Geng Xin-Hua; Zhao Ying

Palabras clave: General Physics and Astronomy.

Pp. 047304