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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

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Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model

Xin-Miao Zhu; Min Cui; Yu Wang; Tian-Jing Yu; Jin-Xiang Deng; Hong-Li Gao

<jats:p>Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal–electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p<jats:sup>+</jats:sup>/n (n<jats:sup>+</jats:sup>/p) structure, it is demonstrated here that an optimal base doping <jats:italic>N</jats:italic> <jats:sub>d(a)</jats:sub> = 3 (7) × 10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup> is observed, and the superior p<jats:sup>+</jats:sup>/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm–300 nm emitter and a 3 μm–6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. 058801

Erratum to “Accurate GW 0 band gaps and their phonon-induced renormalization in solids”

Tong Shen; Xiao-Wei Zhang; Min-Ye Zhang; Hong Jiang; Xin-Zheng Li

<jats:p>The derivation of Eq. (28) in the original paper [<jats:italic>Chin. Phys. B</jats:italic> <jats:bold>30</jats:bold> 117101 (2021)] is corrected.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. 059901

Erratum to “Boundary layer flow and heat transfer of a Casson fluid past a symmetric porous wedge with surface heat flux”

Swati Mukhopadhyay; Iswar Chandra Mandal

<jats:p>We would like to acknowledge the misprinted terms in our published paper “Boundary layer flow and heat transfer of a Casson fluid past a symmetric porous wedge with surface heat flux” [<jats:italic>Chin. Phys. B</jats:italic> <jats:bold>23</jats:bold> 044702 (2014)]. Since only two misprints exist and the main results of the published paper are correct, we present the correct equations in this erratum.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. 059902

Improving the teleportation of quantum Fisher information under non-Markovian environment

Yan-Ling Li; Yi-Bo Zeng; Lin Yao; Xing Xiao

<jats:title>Abstract</jats:title> <jats:p>Quantum teleportation is designed to send an unknown quantum state between two parties. In the perspective of remote quantum metrology, one may be interested in teleporting the information that is encoded by physical parameters synthesized by quantum Fisher information (QFI). However, the teleported QFI is often destroyed by the unavoidable interaction between the system and the environment. Here, we propose two schemes to improve the teleportation of QFI in the non-Markovian environment. One is to control the quantum system through the operations of weak measurement (WM) and corresponding quantum measurement reversal (QMR). The other is to modify the quantum system based on the monitoring result of the environment (i.e., environment-assisted measurement, EAM). It is found that, in the non-Markovian environment, these two schemes can increase the teleportation of QFI. By selecting the appropriate strengths of WM and QMR, the environment noise can be completely eliminated and the initial QFI is perfectly teleported. A comprehensive comparison shows that the second scheme not only has a higher probability of success than the first one, but also has a significant improvement of the teleported QFI.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

Enhanced and tunable circular dichroism in visible waveband by coupling of waveguide mode and local surface plasmon resonances in double-layer asymmetric metal grating

Liu-Li Wang; Yang Gu; Yi-Jing Chen; Ya-Xian Ni; Wen Dong

<jats:title>Abstract</jats:title> <jats:p>Circular dichroism (CD) has shown very interesting possibilities as one of the means to characterize the chiral signal of chiral structure. Here, we theoretically demonstrated the enhanced and tunable CD in the visible light regime using a composite structure consisting of a double-layer metal grating gaped by a dielectric waveguide layer. Based on the coupling of the waveguide modes and the localized plasmonic resonances, the CD could reach a maximum value as high as 0.52 at 635 nm, which is four times higher than the CD value obtained in a conventional double-layer grating without the waveguide coupling effect. Furthermore, the spectral positions of the enhanced CD bands could be easily tuned by controlling the structural parameters. The proposed hybrid double grating and waveguide structures could have potential applications in chiral selective imaging, sensing and spectroscopy, especially where transmission measurement is required.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

A Pure Dielectric Metamaterial Absorber with Broadband and Thin Thickness Based on a Cross-hole Array Structure

Wenbo Cao; Youquan Wen; Chao Jiang; Yantao Yu; Yiyu Wang; Zheyipei Ma; Zixiang Zhao; Lanzhi Wang; Xiaozhong Huang

<jats:title>Abstract</jats:title> <jats:p>In this work, a pure dielectric metamaterial absorber with broadband and thin thickness is proposed, whose structure is designed as periodic cross hole array. The pure dielectric metamaterial absorber with high permittivity is prepared by ceramic reinforced polymer composites. Compared with ones with low permittivity, the absorber with high permittivity is more sensitive to structural parameters, which means that it is easier to optimize equivalent electromagnetic parameter and achieve wide impedance matching by altering the size or shape of unit cell. The optimized metamaterial absorber exhibits the reflection loss below -10 dB in 7.93~35.76 GHz with a thickness of 3.5 mm, which shows favorable absorption property under the oblique incidence of TE polarization (±45°). Whether it is measured or simulated value, the strongest absorbing peak reaches below -45 dB, which exceeds that of most metamaterial absorber. The distributions of power loss density, electric and magnetic field are proposed to study the origin of their strong absorbing property. Multiple resonance mechanisms are developed to explain the phenomenon, including polarization relaxation of dielectric and edge effect of the cross-hole array. This work overcome the shortcoming of narrow absorbing bandwidth of dielectric. It demonstrates that the pure dielectric metamaterial absorber with high permittivity has great potential in the field of microwave absorption.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

A band-pass frequency selective surface with polarization rotation

Lin Bao-Qin; Huang Wen-Zhun; Guo Jian-Xin; Liu Zhe; Wang Yan-Wen; Ye Hong-Jun

<jats:title>Abstract</jats:title> <jats:p>In this work, a band-pass frequency selective surface (FSS) with polarization rotation property is proposed. The proposed polarization rotating FSS(PR-FSS) is a two-dimensional periodic structure, its unit cell is an antenna-filter-antenna (AFA) module, and the polarization directions of the upper and lower antennas in each AFA module are orthogonal to each other, so the PR-FSS can achieve frequency selection and 90 degrees polarization rotation at the same time. The numerical simulation demonstrate that the anticipated frequency selection and polarization rotation are realized by the PR-FSS in the frequency band from 8.84 to 10.30 GHz with a relative bandwidth of 15.26%, and the maximum insertion loss in the pass band is only 0.17dB. Finally, one effective experiment validation is carried out, a reasonable agreement is observed between the experimental and simulated results except for a slight deviation caused by fabrication error and measurement tolerance.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

Electron Delocalization Enhances the Thermoelectric Performance of Misfit Layer Compound (Sn1–x Bi x S)1.2(TiS2)2

Xin Zhao; Xuanwei Zhao; Liwei Lin; Ding Ren; Bo Liu; Ran Ang

<jats:title>Abstract</jats:title> <jats:p>The misfit layer compound (SnS)<jats:sub>1.2</jats:sub>(TiS<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub> is a promising low-cost thermoelectric material because of its low thermal conductivity derived from superlattice-like structure. However, the strong covalent bonds within each constituent layer highly localized the electrons thereby it is highly challenging to optimize the power factor by doping or alloying. Here, we show Bi doping at the Sn site markedly breaks the covalent bonds networks and highly delocalizes the electrons. These results in a high charge carrier concentration and enhanced power factor throughout the whole temperature range. It is highly remarkably Bi doping also significantly reduces the thermal conductivity by suppressing the heat conduction carried by phonons, indicating it independently modulates phonon and charge transport properties. These effects collectively give rise to a maximum ZT of 0.3 at 720 K. In addition, we applied the single Kane band model and the Debye-Callaway model to clarify the electron and phonon transport mechanism in the misfit layer compound (SnS)<jats:sub>1.2</jats:sub>(TiS<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub>.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

Nonreciprocal coupling induced entanglement enhancement in a double-cavity optomechanical system

Yuan-Yuan Liu; Zhi-Ming Zhang; Jun-Hao Liu; Jin-Dong Wang; Ya-Fei Yu

<jats:title>Abstract</jats:title> <jats:p>We investigate the quantum entanglement in a double-cavity optomechanical system consisting of an optomechanical cavity and an auxiliary cavity, where the optomechanical cavity mode couples with the mechanical mode via radiation-pressure interaction, and simultaneously couples with the auxiliary cavity mode via nonreciprocal coupling. We study the entanglement between the mechanical oscillator and the cavity modes when the two cavities are reciprocally or nonreciprocally coupled. The logarithmic negativity $E_{n}^{(1)}$ ($E_{n}^{(2)}$) is adopted to describe the entanglement degree between the mechanical mode and the optomechanical cavity mode (the auxiliary cavity mode). We find that both $E_{n}^{(1)}$ and $E_{n}^{(2)}$ have maximum values in the case of reciprocal coupling. By using nonreciprocal coupling, $E_{n}^{(1)}$ and $E_{n}^{(2)}$ can exceed those maximum values, and a wider detuning region where the entanglement exists can be obtained. Moreover, the entanglement robustness with respect to the environment temperature is also effectively enhanced.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

Hong Wang; Zunren Lv; Shuai Wang; Haomiao Wang; Hongyu Chai; Xiaoguang Yang; Lei Meng; Chen Ji; Tao Yang

<jats:title>Abstract</jats:title> <jats:p>We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.</jats:p>

Palabras clave: General Physics and Astronomy.

Pp. No disponible