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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/18/10/054

Magnetization of two-dimensional heavy holes with boundaries in a perpendicular magnetic field

Fang Cheng; Wang Zhi-Gang; Li Shu-Shen; Zhang Ping

Palabras clave: General Physics and Astronomy.

Pp. 4430-4436

doi: 10.1088/1674-1056/18/10/055

All-electron study of ultra-incompressible superhard material ReB 2 : structural and electronic properties

Li Yan-Ling; Zhong Guo-Hua; Zeng Zhi

Palabras clave: General Physics and Astronomy.

Pp. 4437-4442

doi: 10.1088/1674-1056/18/10/056

First-principles calculations for electronic and optical properties of the zinc-blende structured BeS compound under pressure

Yang Huan; Chang Jing; Li Zhe; Chen Xiang-Rong

Palabras clave: General Physics and Astronomy.

Pp. 4443-4448

doi: 10.1088/1674-1056/18/10/057

Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/Al x Ga 1-

Zhang Min; Ban Shi-Liang

Palabras clave: General Physics and Astronomy.

Pp. 4449-4455

doi: 10.1088/1674-1056/18/10/058

Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor

Cao Quan-Jun; Zhang Yi-Men; Jia Li-Xin

Palabras clave: General Physics and Astronomy.

Pp. 4456-4459

doi: 10.1088/1674-1056/18/10/059

Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires

Fu Xiu-Li; Peng Zhi-Jian; Tangwei-Hua; Guo Xi

Palabras clave: General Physics and Astronomy.

Pp. 4460-4464

doi: 10.1088/1674-1056/18/10/060

The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

An Xia; Fan Chun-Hui; Huang Ru; Guo Yue; Xu Cong; Zhang Xing; Wang Yang-Yuan

Palabras clave: General Physics and Astronomy.

Pp. 4465-4469

doi: 10.1088/1674-1056/18/10/061

Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation

Guo Hui; Wang Yue-Hu; Zhang Yu-Ming; Qiao Da-Yong; Zhang Yi-Men

Palabras clave: General Physics and Astronomy.

Pp. 4470-4473

doi: 10.1088/1674-1056/18/10/062

Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates

Chen Gang; Bai Song; Li Zhe-Yang; Wu Peng; Chen Zheng; Han Pin

Palabras clave: General Physics and Astronomy.

Pp. 4474-4478

doi: 10.1088/1674-1056/18/10/063

Tunneling conductance in quantum wire/insulator/d x2-y2 + id xy mixed wave superconductor junctions

Wei Jian-Wen

Palabras clave: General Physics and Astronomy.

Pp. 4479-4485