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<jats:p>Band alignment between NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> and nonpolar GaN plane and between NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped <jats:italic>a</jats:italic>-plane, <jats:italic>m</jats:italic>-plane, and <jats:italic>r</jats:italic>-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> films. By fitting the Ga 3d spectrum obtained from the NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>/GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub>. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.</jats:p>

<jats:p>The paper explores the evolution of thermal behavior of the material by studying the variations in thermal diffusivity using the single beam thermal lens (TL) technique. For this purpose, the decomposition of Cu(OH)<jats:sub>2</jats:sub> into CuO is studied in a time range up to 120 h, by subjecting the sample to morphological, structural, and spectroscopic characterizations. The time evolution of thermal diffusivity can be divided into three regions for demonstrating the dynamics of the reaction. When the reaction is complete, the thermal diffusivity is also found to be saturated. In addition to the morphological modifications, from rods to flakes, the variations in the amount of hydroxyl group are attributed to be responsible for the enhancement of base fluid’s thermal diffusivity by 165%. Thus the study unveils the role of hydroxyl groups in the thermal behavior of CuO.</jats:p>

<jats:p>The two-dimensional (2D) Ruddlesden–Popper-type perovskites, possessing tunable bandgap, narrow light emission, strong quantum confinement effect, as well as a simple preparation method, are identified as a new generation of candidate materials for efficient light-emitting diodes. However, the preparation of high-quality quasi-2D perovskite films is still a challenge currently, such as the severe mixing of phases and a high density of defects within the films, impeding the further promotion of device performance. Here, we prepared the quasi-2D PEA<jats:sub>2</jats:sub>MA<jats:sub> <jats:italic>n</jats:italic>−1</jats:sub>Pb<jats:sub> <jats:italic>n</jats:italic> </jats:sub>Br<jats:sub>3<jats:italic>n</jats:italic>+1</jats:sub> perovskite films by a modified spin-coating method, and the phases with large bandgap were effectively suppressed by the vacuum evaporation treatment. We systematically investigated the optical properties and stability of the optimized films, and the photoluminescence (PL) quantum yield of the treated films was enhanced from 23% to 45%. We also studied the emission mechanisms by temperature-dependent PL spectra. Moreover, the stability of films against moisture, ultraviolet light, and heat was also greatly improved.</jats:p>

<jats:p>Silicon carbide nanotubes (SiCNTs) have broad application prospects in the field of micro-nanodevices due to their excellent physical properties. Based on first-principles, the difference between optical properties of SiCNTs where C atom or Si atom is replaced by group-V element is studied. The results show that the optical absorptions of SiCNTs doped by different elements are significantly different in the band of 600 nm–1500 nm. The differences in photoconductivity, caused by different doping elements, are reflected mainly in the band above 620 nm, the difference in dielectric function and refractive index of SiCNTs are reflected mainly in the band above 500 nm. Further analysis shows that SiCNTs doped with different elements change their band structures, resulting in the differences among their optical properties. The calculation of formation energy shows that SiCNTs are more stable when group-V element replaces Si atom, except N atom. These research results will be beneficial to the applications of SiC nanomaterials in optoelectronic devices and provide a theoretical basis for selecting the SiCNTs’ dopants.</jats:p>

<jats:p>Composite materials assembled by metal/carbon nanoparticles and 2D layered flakes can provide abundant interfaces, which are beneficial for high-performance microwave absorbers. Herein, Zn-Co/C/RGO composites, composed of Zn-Co metal-organic framework-derived Zn-Co/C nanoparticles and reduced graphene oxide (RGO), were obtained through a facile method. The multilayer structure was due to the introduction of hollow Zn-Co/C nanoparticles in the RGO sheets. Zn-Co/C nanoparticles provided abundant polarization and dipole centers on the RGO surface, which enhanced the microwave absorption abilities. Different concentrations of RGO were introduced to optimize impedance matching. The minimum reflection loss (<jats:italic>R</jats:italic> <jats:sub>L</jats:sub>) of Zn-Co/C/RGO with a thickness of 1.5 mm reached –32.56 dB with the bandwidth corresponding to <jats:italic>R</jats:italic> <jats:sub>L</jats:sub> at –10 dB, which can reach 3.92 GHz, while a minimum <jats:italic>R</jats:italic> <jats:sub>L</jats:sub> of –47.15 dB at 11.2 GHz was also obtained at a thickness of 2.0 mm. The electromagnetic data demonstrate that Zn-Co/C/RGO presented excellent absorption performance and has potential for application in the microwave absorption field.</jats:p>

<jats:p>Nano-diamond particles are co-deposited on Ti substrates with metal (Ti/Ni) nanoparticles (NPs) by the electrophoretic deposition (EPD) method combined with a furnace annealing at 800 °C under N<jats:sub>2</jats:sub> atmosphere. Modifications of structural and electron field emission (EFE) properties of the metal-doped films are investigated with different metal NPs concentrations. Our results show that the surface characteristics and EFE performances of the samples are first enhanced and then reduced with metal NPs concentration increasing. Both the Ti-doped and Ni-doped nano-diamond composite films exhibit optimal EFE and microstructural performances when the doping quantity is 5 mg. Remarkably enhanced EFE properties with a low turn-on field of 1.38 V/μm and a high current density of 1.32 mA/cm<jats:sup>2</jats:sup> at an applied field of 2.94 V/μm are achieved for Ni-doped nano-diamond films, and are superior to those for Ti-doped ones. The enhancement of the EFE properties for the Ti-doped films results from the formation of the TiC-network after annealing. However, the doping of electron-rich Ni NPs and formation of high conductive graphitic phase are considered to be the factor, which results in marvelous EFE properties for these Ni-doped nano-diamond films.</jats:p>

<jats:p>Morphology control of perovskite films is of critical importance for high-performance photovoltaic devices. Although solvent vapor annealing (SVA) treatment has been widely used to improve the film quality efficiently, the detailed mechanism of film growth is still under construction, and there is still no consensus on the selection of solvents and volume for further optimization. Here, a series of solvents (DMF, DMSO, mixed DMF/DMSO) were opted for exploring their impact on fundamental structural and physical properties of perovskite films and the performance of corresponding devices. Mixed solvent SVA treatment resulted in unique benefits that integrated the advantages of each solvent, generating a champion device efficiency of 19.76% with improved humidity and thermal stability. The crystallization mechanism was constructed by conducting grazing-incidence wide-angle x-ray diffraction (GIWAXS) characterizations, showing that dissolution and recrystallization dominated the film formation. A proper choice of solvent and its volume balancing the two processes thus afforded the desired perovskite film. This study reveals the underlying process of film formation, paving the way to producing energy-harvesting materials in a controlled manner towards energy-efficient and stable perovskite-based devices.</jats:p>

<jats:p>The 〈 100 〉 crystal-oriented silicon micropillar array platforms were prepared by microfabrication processes for the purpose of electrolyte additive identification. The silicon micropillar array platform was used for the study of fluorinated vinyl carbonate (FEC), vinyl ethylene carbonate (VEC), ethylene sulfite (ES), and vinyl carbonate (VC) electrolyte additives in the LiPF<jats:sub>6</jats:sub> dissolved in a mixture of ethylene carbonate and diethyl carbonate electrolyte system using charge/discharge cycles, electrochemical impedance spectroscopy, cyclic voltammetry, scanning electron microscopy, and x-ray photoelectron spectroscopy. The results show that the silicon pillar morphology displays cross-shaped expansion after lithiation/delithiation, the inorganic lithium salt keeps the silicon pillar morphology intact, and the organic lithium salt content promotes a rougher silicon pillar surface. The presence of poly-(VC) components on the surface of FEC and VC electrodes allows the silicon pillar to accommodate greater volume expansion while remaining intact. This work provides a standard, fast, and effective test method for the performance analysis of electrolyte additives and provides guidance for the development of new electrolyte additives.</jats:p>

<jats:p>Understanding the behaviours of ice nucleation in non-isothermal conditions is of great importance for the preparation and retention of supercooled water. Here ice nucleation in supercooled water under temperature gradients is analyzed thermodynamically based on classical nucleation theory (CNT). Given that the free energy barrier for nucleation is dependent on temperature, different from a uniform temperature usually used in CNT, an assumption of linear temperature distribution in the ice nucleus was made and taken into consideration in analysis. The critical radius of the ice nucleus for nucleation and the corresponding nucleation model in the presence of a temperature gradient were obtained. It is observed that the critical radius is determined not only by the degree of supercooling, the only dependence in CNT, but also by the temperature gradient and even the Young’s contact angle. Effects of temperature gradient on the change in free energy, critical radius, nucleation barrier and nucleation rate with different contact angles and degrees of supercooling are illustrated successively. The results show that a temperature gradient will increase the nucleation barrier and decrease the nucleation rate, particularly in the cases of large contact angle and low degree of supercooling. In addition, there is a critical temperature gradient for a given degree of supercooling and contact angle, at the higher of which the nucleation can be suppressed completely.</jats:p>

<jats:p>Power system inherently consists of capacitance and inductance in its components. Equipment with saturable inductance and circuit capacitance provides circumstances of generating ferroresonance, resulting in overvoltage and overcurrent in the connected system. The effects of ferroresonance result in insulation failure and hence damage to the equipment is unavoidable. Though many devices are proposed for mitigating such circumstances, a promising technology of using memristors may provide better performance than others in the future. A memristor emulator using the N-channel JFET J310 is used in this work. Unlike other electronic components that replicate memristor properties, the chosen memristor emulator is a passive device since it does not need any external power supply. Simulation and experimental results verify the design of a memristor emulator and the characteristics of an ideal memristor. Experimental results prove that the memristor emulator can suppress the fundamental ferroresonance induced in a prototype single phase transformer. The results of the harmonic analysis also validate the memristor performance against the conventional technique.</jats:p>