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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/27/4/048201

Low-temperature synthesis of apatite-type La 9.33 Ge 6

Guang-Chao Yin; Guo-Dong Zhao; Hong Yin; Fu-Chao Jia; Qiang Jing; Sheng-Gui Fu; Mei-Ling Sun; Wei Gao

Palabras clave: General Physics and Astronomy.

Pp. 048201

doi: 10.1088/1674-1056/27/4/048401

Enhancement of thermoelectric properties of SrTiO 3 /LaNb–SrTiO 3 composite by different doping levels

Ke-Xian Wang; Jun Wang; Yan Li; Tao Zou; Xiao-Huan Wang; Jian-Bo Li; Zheng Cao; Wen-Jing Shi; Xinba Yaer

Palabras clave: General Physics and Astronomy.

Pp. 048401

doi: 10.1088/1674-1056/27/4/048402

Graphene-enhanced thermoelectric properties of p-type skutterudites

Dandan Qin; Yuan Liu; Xianfu Meng; Bo Cui; Yaya Qi; Wei Cai; Jiehe Sui

Palabras clave: General Physics and Astronomy.

Pp. 048402

doi: 10.1088/1674-1056/27/4/048403

Fundamental and progress of Bi 2 Te 3 -based thermoelectric materials

Min Hong; Zhi-Gang Chen; Jin Zou

Palabras clave: General Physics and Astronomy.

Pp. 048403

doi: 10.1088/1674-1056/27/4/048501

Scalability of dark current in silicon PIN photodiode

Ya-Jie Feng; Chong Li; Qiao-Li Liu; Hua-Qiang Wang; An-Qi Hu; Xiao-Ying He; Xia Guo

Palabras clave: General Physics and Astronomy.

Pp. 048501

doi: 10.1088/1674-1056/27/4/048502

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high- κ insulator

Xue Chen; Zhi-Gang Wang; Xi Wang; James B Kuo

Palabras clave: General Physics and Astronomy.

Pp. 048502

doi: 10.1088/1674-1056/27/4/048503

Research on the radiation hardened SOI devices with single-step Si ion implantation

Li-Hua Dai; Da-Wei Bi; Zhi-Yuan Hu; Xiao-Nian Liu; Meng-Ying Zhang; Zheng-Xuan Zhang; Shi-Chang Zou

Palabras clave: General Physics and Astronomy.

Pp. 048503

doi: 10.1088/1674-1056/27/4/048504

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li; Zhi-Nong Yu; Jin Cheng; Yong-Hua Chen; Jian-She Xue; Jian Guo; Wei Xue

Palabras clave: General Physics and Astronomy.

Pp. 048504

doi: 10.1088/1674-1056/27/4/048701

Analytically determining frequency and amplitude of spontaneous alpha oscillation in Jansenʼs neural mass model using the describing function method

Yao Xu; Chun-Hui Zhang; Ernst Niebur; Jun-Song Wang

Palabras clave: General Physics and Astronomy.

Pp. 048701

doi: 10.1088/1674-1056/27/5/050201

Design of small-scale gradient coils in magnetic resonance imaging by using the topology optimization method

Hui Pan; Feng Jia; Zhen-Yu Liu; Maxim Zaitsev; Juergen Hennig; Jan G Korvink

Palabras clave: General Physics and Astronomy.

Pp. 050201