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<jats:p>New tungsten ion source is produced by using single and double-pulse laser ablation system. Combined collinear Nd:YAG laser beams (266+1064 nm) are optimized to focus on the sample in air. Optimization of the experimental parameters is achieved to enhance the signal-to-noise ratio of the emission spectra. The velocity distribution of the emitted plasma cloud is carefully measured. The influences of the potential difference between the bias electrodes, laser wavelength and intensity on the current signal are also studied. The results show that the increase in the tungsten ion velocity under the double-pulse lasers causes the output current signal to increase by about three folds. The electron density and temperature are calculated by using the Stark-broadened line profile of tungsten line and Boltzmann plot method of the upper energy levels, respectively. The signal intensity dependence of the tungsten ion angular distribution is also analyzed. The results indicate that the double-pulse laser ablation configuration is more potent technique for producing more metal ion source deposition, thin film formation, and activated plasma-facing component material.</jats:p>

<jats:p>In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides’ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side’s SNM is decreased and the other data side’s SNM is increased. Moreover, measurement of SNM under different supply voltages (<jats:italic>V</jats:italic> <jats:sub>dd</jats:sub>) reveals that SNM is more sensitive to TID under lower <jats:italic>V</jats:italic> <jats:sub>dd</jats:sub>. The impact of TID on SNM under data retention <jats:italic>V</jats:italic> <jats:sub>dd</jats:sub> should be tested, because <jats:italic>V</jats:italic> <jats:sub>dd</jats:sub> of SRAM cell under data retention mode is lower than normal <jats:italic>V</jats:italic> <jats:sub>dd</jats:sub>. The mechanism under the above results is analyzed by measurement of <jats:italic>I</jats:italic>—<jats:italic>V</jats:italic> characteristics of SRAM cell transistors.</jats:p>