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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

A facile and efficient dry transfer technique for two-dimensional Van derWaals heterostructure

Li Xie; Luojun Du; Xiaobo Lu; Rong Yang; Dongxia Shi; Guangyu Zhang

Palabras clave: General Physics and Astronomy.

Pp. 087306

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Bin Li; Shan-Jin Huang; Hai-Long Wang; Hua-Long Wu; Zhi-Sheng Wu; Gang Wang; Hao Jiang

Palabras clave: General Physics and Astronomy.

Pp. 087307

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Linna Zhao; Peihong Yu; Zixiang Guo; Dawei Yan; Hao Zhou; Jinbo Wu; Zhiqiang Cui; Huarui Sun; Xiaofeng Gu

Palabras clave: General Physics and Astronomy.

Pp. 087308

Investigation of Zn 1− x Cd x

Jie Chen; Xue-Min Wang; Ji-Cheng Zhang; Hong-Bu Yin; Jian Yu; Yan Zhao; Wei-Dong Wu

Palabras clave: General Physics and Astronomy.

Pp. 087309

Electronic transport properties of single-wall boron nanotubes

Xinyue Dai; Yi Zhou; Jie Li; Lishu Zhang; Zhenyang Zhao; Hui Li

Palabras clave: General Physics and Astronomy.

Pp. 087310

Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

Yangfeng Li; Yang Jiang; Junhui Die; Caiwei Wang; Shen Yan; Ziguang Ma; Haiyan Wu; Lu Wang; Haiqiang Jia; Wenxin Wang; Hong Chen

Palabras clave: General Physics and Astronomy.

Pp. 087311

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Yan Cui; Ling Yang; Teng Gao; Bo Li; Jia-Jun Luo

Palabras clave: General Physics and Astronomy.

Pp. 087501

Effects of Zr substitution on structural, morphological, and magnetic properties of bismuth iron oxide phases

A Asif; M Hassan; S Riaz; S Naseem; SS Hussain

Palabras clave: General Physics and Astronomy.

Pp. 087502

Improvement of the high- κ /Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Ji-Bin Fan; Xiao-Jiao Cheng; Hong-Xia Liu; Shu-Long Wang; Li Duan

Palabras clave: General Physics and Astronomy.

Pp. 087701

Synergistic effects of electrical and optical excitations on TiO 2 resistive device

Qi Mao; Wei-Jian Lin; Ke-Jian Zhu; Yang Meng; Hong-Wu Zhao

Palabras clave: General Physics and Astronomy.

Pp. 087702