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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

The research on suspended ZnO nanowire field-effect transistor

Li Ming; Zhang Hai-Ying; Guo Chang-Xin; Xu Jing-Bo; Fu Xiao-Jun

Palabras clave: General Physics and Astronomy.

Pp. 1594-1597

Frequency selective surface structure optimized by genetic algorithm

Lu Jun; Wang Jian-Bo; Sun Guan-Cheng

Palabras clave: General Physics and Astronomy.

Pp. 1598-1600

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

Gu Wen-Ping; Duan Huan-Tao; Ni Jin-Yu; Hao Yue; Zhang Jin-Cheng; Feng Qian; Ma Xiao-Hua

Palabras clave: General Physics and Astronomy.

Pp. 1601-1608

Localized states of flattened quantum elliptic rings and their optical properties

Situ Shu-Ping

Palabras clave: General Physics and Astronomy.

Pp. 1609-1613

The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky co

Liu Fang; Wang Tao; Shen Bo; Huang Sen; Lin Fang; Ma Nan; Xu Fu-Jun; Wang Peng; Yao Jian-Quan

Palabras clave: General Physics and Astronomy.

Pp. 1614-1617

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Liu Fang; Wang Tao; Shen Bo; Huang Sen; Lin Fang; Ma Nan; Xu Fu-Jun; Wang Peng; Yao Jian-Quan

Palabras clave: General Physics and Astronomy.

Pp. 1618-1621

Conductance switching mechanism of Rose Bengal organic thin films in ambient conditions

Cai Li; Guo Hai-Ming; Zhu Xi; Du Shi-Xuan; Shi Dong-Xia; Gao Hong-Jun

Palabras clave: General Physics and Astronomy.

Pp. 1622-1626

Numerical model of multilayer organic light-emitting devices

Hu Yue; Rao Hai-Bo

Palabras clave: General Physics and Astronomy.

Pp. 1627-1630

Study on reaction mechanism of YBa 2 Cu 3 O 7– x

Ding Fa-Zhu; Lü Xu-Dong; Gu Hong-Wei; Li Tao; Cao Jiang-Li

Palabras clave: General Physics and Astronomy.

Pp. 1631-1636

Raman scattering studies on manganese ion-implanted GaN

Xu Da-Qing; Zhang Yi-Men; Zhang Yu-Ming; Li Pei-Xian; Wang Chao

Palabras clave: General Physics and Astronomy.

Pp. 1637-1642